Resonant Tunneling Properties of Single Electron Transistors
with a Novel Double-Gate Geometry
T. Fujisawa and S. Tarucha
We describe the operation of single electron transistors with a double-gate
geometry defined by Ga focused ion beam implanted in-plane gates and line Schottky
gates. The in-plane gates are used to squeeze the channel and to increase the
charging energy. The Schottky gates are placed on the channel to form the tunnel
junctions. Independent control of these gates is useful to define the geometry of
single electron transistors. We found strong resonances exhibiting negative
differential resistance in the small devices, which is attributed to tunneling
through zero-dimensional states when the barrier has a parabolic-shaped potential.
Appl. Phys. Lett. 68, 526 (1996).