Curriculum Vitae [Toshimasa Fujisawa]

Prof. Toshimasa Fujisawa
Department of Physics
Tokyo Institute of Technology
2-12-1-H81, Ookayama, Meguro-ku, Tokyo, 152-8551 JAPAN
Phone/Fax: +81-3-5734-2750
e-mail: fujisawaphys.titech.ac.jp

Born on May 23, 1963 in Tokyo, Japan.

- Master degree from Tokyo Institute of Technology, March, 1988(S63).
- Doctor degree from Tokyo Institute of Technology. March, 1991(H3).
---- PhD thesis: "DX centers in III-V semiconductors"

- NTT Basic Research Laboratories, (April, 1991 - Aug. 2008).
-- Senior Research Scientist, NTT (Apr. 1995 - Aug. 2008)
-- Research fellow at the Delft University of Technology, (Dec. 1997 - Aug. 1998).
-- Distinguished Technical Members, NTT (Apr. 2001 - Aug. 2008)
-- Guest Associate Professer at Tokyo Institute of Technology (Jun. 2003 - Aug. 2008)
-- Group leader (Quantum Solid State Physics Group) (Jul. 2006 - Aug. 2008)
- Professor at Research Center for Low Temperature Physics, Tokyo Institute of Technology (Sep. 2008 - Sep. 1010)
- Professor at Department of Physics, Tokyo Institute of Technology (Nov. 2010 - present)


- Sir Martin Wood Prize, Millenium Science Forum (2003.11)
- JSPS(Japan Society for the Promotion of Science) Prize (2005. 3)

Reviewing Experience (Journals)
Nature, Science, Phys. Rev. Lett., Phys. Rev. B, Appl. Phys. Lett., Nature Physics, Nature Materials, Physica B, Physica E, Nano Lett., Nanotechnology, New J. Phys., Jpn. J. Appl. Phys., J. Vac. Sci. Technol., IEEE(Trans Nano)

Conference/Symposium Committee
- Int. Conf. Solid State Device and Materials SSDM2010, Program Committee, Subcommittee member (Area9).
- The 37th Int. Symp. Compound Semiconductors ISCS2010, Program Committee member (4: New Properties and Physics)
- Int. Conf. Solid State Device and Materials SSDM2009, Program Committee, Subcommittee chair (Area9).
- The 18th Int. Conf. on Electronic Properties of Two-Dimensional Systems (EP2DS, 2009), Program Committee member.
- Int. Symp. Nanoscale Transport and Technology (ISNTT2009), Organizing and Program Committee, Co-Chair.
- Int. Conf. Solid State Device and Materials SSDM2008, Program Committee, Subcommittee chair (Area9).
- Int. Conf. Solid State Device and Materials SSDM2007, Program Committee, Subcommittee member (Area9).
- 15th Int. Conf. Nonequilibrium Carrier Dynamics in Semiconductors (HCIS15, 2007), Program Committee member.
- Int. Conf. Nanoelectronics, Nanostructures and Carrier Interactions (NNCI2007), Organizing and Program Committee, Co-Chair
- Int. Conf. Solid State Device and Materials SSDM2006, Program Committee, Subcommittee member (Area9).
- Int. Conf. Solid State Device and Materials SSDM2005, Program Committee, Subcommittee member (Area9).
- Int. Conf. Nanoelectronics, Nanostructures and Carrier Interactions (NNCI2005), Organizing and Program Committee member


CV : Toshimasa Fujisawa